Ferroelectric RAM: Key market research findings
- APAC dominates the market geographically
- Development of fabricated flexible FeRAM drives market growth
- Key vendors – Cypress Semiconductor, Fujitsu, Texas Instruments, and ROHM
Technavio’s market research analysts predict the global ferroelectric RAM market to grow at a CAGR of around 6% between 2016 and 2020. The growth of this market is fueled primarily by the increasing adoption of ferroelectric RAMs in smart cards. Smart card manufacturers have realized the benefits of using ferroelectric RAM, which has led to its increased adoption among end-users. A smart card comprises a microcomputer, storage circuit, and an RF circuit. It can be used for calling purposes, electronic cash transactions, and other applications. During 2015, the global ferroelectric RAM market was dominated by the APAC region with a market share of more than 72%. The growing demand for ferroelectric RAMs in mobile devices and consumer electronics is the major factor contributing to the growth of the ferroelectric RAM market in the APAC region.
The new industry research report from Technavio discusses in detail the key drivers and trends responsible for the growth of this market and its sub-segments.
“Researchers at the Institute of Advanced Electronic Materials have fabricated flexible FeRAM devices using state-of-the-art CMOS processes such as sputtering, photolithography, and reactive ion etching. Their research has led to a reduction in the gap between rigid inflexible semiconductor, resulting in high integration density, performance, and yield, and highly flexible polymer/hybrid materials that are low performance electronics,” says Sunil Kumar Singh, Lead Analyst, Hardware & Semiconductor, Technavio Research.
In the automotive sector, FeRAMs are used for non-volatile data logging in most sub-systems such as stability control, power train, smart airbags, dashboard instrumentation, battery management, engine controls, and infotainment applications. Furthermore, FeRAM is used in automotive event data recorder (EDR). EDR is similar to the data recorders such as black box used in airplanes and trains. EDRs were designed to capture and record the data from different control modules within an automotive unit.
The key vendors in the global ferroelectric RAM market include Cypress Semiconductor, Fujitsu, Texas Instruments, and ROHM. FeRAM, which is likely to be adopted in the future as a next-generation non-volatile memory solution, delivers higher rewrite durability, faster data rewrite, and lower power consumption than the currently used non-volatile memories. This contributes to greater power savings and increased functionality in a variety of applications.
A more detailed analysis is available in the Technavio report, Global Ferroelectric RAM Market 2016-2020.
We can customize reports by other regions and specific segments upon request.
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