Global Next Generation Memory Market – New Market Research Report

Renewable energy

The global next generation memory market is currently valued at more than USD 877 million and is expected to reach around USD 7,992 million by 2021, says Technavio.

Technavio has announced its latest market research report on the global next generation memory market, under its embedded systems portfolio. This market analysis discusses the major drivers and key emerging trends and offers an analysis of key vendors like Cypress Semiconductor, Fujitsu, IBM, Intel, Micron Technology, ROHM Semiconductor, Samsung Electronics, Texas Instruments, and Toshiba.

According to Sunil Kumar Singh, a lead analyst for embedded systems research at Technavio, “Next generation memory technologies consume approximately 50% less power than other flash memories as they are mostly used in in battery-powered wireless sensors. Users generally prefer buying devices that are integrated with the next-generation memory technologies.”

Next-generation memory technologies have the unique feature of a faster wake-up time. They also eliminate the need for data saving and restoring, unlike other flash memories. This gives next-generation memory technologies an additional benefit over other RAMs, along with the advantage of lower power consumption

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Rising popularity of smart meters

Smart meters help utility providers analyze the usage of their services. It also helps customers record and analyze the use of electricity, gas, or water and identify opportunities for savings, thereby, fueling its adoption. Next-generation memory-based smart meters can write data 1,000 times faster than other flash memory-based meters such as DRAM. Furthermore, next-generation memory technologies consume less power, enabling the smart meter manufacturers to integrate the RAM as a cost-effective memory hardware.

Increasing development of high-speed FeRAM

Advanced ferroelectric RAM-based electronic devices have a high level of efficiency and throughput. With advanced ferroelectric RAM, electronic products can be designed in such a way that end-users get more benefits and are satisfied with their return on investment. For instance, Fujitsu launched a 4 Mbit FeRAM with a quad serial peripheral interface, which is almost four times as fast as their existing parallel 4 Mbit FeRAM device and outperforms the 45-ns parallel SRAM.

This research report includes an in-depth analysis and market shares and sizes of the sub-segments and geography. An analysis of the key companies, including their market shares, business overview, key financials, etc. is provided in this study. This market study also provides a detailed analysis of key drivers, challenges, and opportunities influencing this market.

A more detailed analysis is available in the Technavio report titled, ‘Global Next Generation Memory Market 2017-2021’. Technavio also customizes reports by other regions and specific segments upon request.

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