According to the latest market research study released by Technavio, the global GaN devices market is expected to grow at a CAGR of almost 16% during the forecast period 2016-2020.
This market research report by Technavio provides an in-depth analysis of the market in terms of revenue and emerging market trends. The report also includes an up-to-date analysis and forecasts for various market segments and all geographical regions.
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Technavio research analysts categorize the global GaN devices market based on end-user application:
Global GaN devices market share by end-user application 2015
|
Cellular infrastructure |
54.60% |
|
Defense |
36.40% |
|
CATV |
4.00% |
|
Others |
5.00% |
Source: Technavio
The top three revenue contributing end-user application segments are discussed below:
GaN devices in cellular infrastructure sector
The cellular infrastructure segment accounted for around 55% of the global GaN devices market in 2015. The rapid surge in the global adoption of smartphones and the rollout of long-term evolution (LTE) networks in China and other countries have increased the usage of mobile data globally. It is expected that the global LTE subscriptions will increase from over 1 billion in 2015 to around 2.5 billion by 2020. This growth has propelled network operators to expand their capacity, with reduced cost and network disruption. Much of the segment’s growth is due to the emergence of 5G network, which compared to 3G and 4G networks, demands for high capacity to transfer data at a fast rate. 5G data will also bring some infrastructural changes, mainly structural, due to the low latency rates, high data rates, and ultra-wide bandwidth that has to be supported for 5G. This will result in the exceed of the current network, 4G by minimum 5 times, leading the network operators to opt for different higher powered front-haul and backhaul solutions, as the current crop of solutions do not have the capacity to scale up. At present, no architectural changes are done by operators to expand 4G devices. As for the expansion of 4G device, more importance is given to technologies such as GaN RF power amplifier to extract more volume from existing LTE spectrum allocations, resulting in reduced additional spectrum purchase and cost.
“By using GaN RF power amplifiers, operators can offer carrier aggregation services, LTE-A, LTE-E, 4G plus, and multi-user multiple input and multiple output (MIMO). It is expected that the demand for GaN power amplifiers will surge over the forecast period, as operators focus on developing new LTE capabilities due to increase in mobile data. However, each network generation will have to be considered by higher levels of efficiency and performance,” says Sunil Kumar Singh, a lead analyst at Technavio for research on semiconductor equipment.
The vendors of GaN RF device must ensure performance, reliability, and process maturity through cost, coverage, and capacity.
GaN devices in the defense sector
In 2015, the defense sector accounted for around 36% of the global GaN devices market. There is development of new products in the defense sector due to the good performance of GaN and simplified design. For example, GaN-on-Si military radio devices operating at ultra-high-frequencies (UHFs) can cover much higher bandwidths and can deliver excellent RF power outputs, efficiency, linearity, and gain. The demand for GaN-on-SiC technology for high level military operations will be increased due to the gaining momentum of EW. There are few operating benefits of GAN which include improved solutions for electronic surveillance and countermeasures, as a single power amplifier covers multi-octave bandwidths. GaN technology is used by phased-array radars to ensure higher power density and integration. This high power breakdown capability reduces component count, eradicates the need for a limiter, and free up area on the printed circuit board (PCB). The power levels and benefits of GaN-on-SiC can be achieved with no current or future technology, resulting in the increase in demand for GaN devices from the defense sector.
GaN devices in CATV
In 2015, the CATV sector accounted for around 4% of the global GaN devices market. CATVs receive efficiency and power density from GaN-based RF and microwave devices. These devices can be used for several purposes such as to increase the bandwidth capacity for viewing digital content on televisions, flowing content from the internet, along with allowing the streaming of content to various connected devices like PCs. Regulations regarding the compulsory use of set-top boxes (STBs) in several emerging countries such as India, where the market penetration for STBs is low, brings a considerable growth in the market. It is expected that by December 2016, most of India will shift toward STBs, as regulated by the Telecom Regulatory Authority of India. The major factors determining the demand for higher bandwidth include advent of HDTVs, need for improved picture quality, and multiple TV sets at homes. Such developments will positively influence the growth of this market segment over the forecast period.
The top leading vendors operating in the global GaN devices market are:
- Avago technologies
- Cree
- GaN Systems
- OSRAM Opto Semiconductors
- Qorvo
Other prominent vendors in the market are Nichia, Bridgelux, Efficient Power Conversion, NXP Semiconductors, Panasonic Semiconductors, Toyoda Gosei, and Gallia Semiconductor.
A more detailed analysis is available in the Technavio report titled, ‘Global GaN Devices Market 2016-2020’. Technavio also customizes reports by other regions and specific segments upon request.
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