- The Global GaN Semiconductor Devices market is expected to grow at a CAGR of 26.9 percent during the period 2013-2018.
London, 20 August 2014: TechNavio, an independent tech-focused global research firm, announced today the publication of its market research report on the Global Gallium Nitride Semiconductor Devices Market 2014-2018. One of the key trends in the market is the preference for the use of GaN with different substrates. Silicon and non-silicon substrates and epitaxy layers can now be fused together to manufacture robust semiconductor devices.
Gallium Nitride is a wide band gap semiconductor with superior properties such as saturation velocity and high breakdown voltage which make GaN an ideal choice for high-power applications. The use of GaN devices is more cost-effective than the use of semiconductors made of silicon and GaAs. GaN devices are considered silicon replacements because they are smaller, lighter, stronger, and more efficient than silicon semiconductor devices.
“The evolution of electric vehicles and hybrid electric vehicles is driving the demand for GaN power semiconductors in this sector,” says Faisal Ghaus, Vice President of TechNavio Research.
“The increase in infotainment applications in the automobile sector is driving the demand for GaN opto-semiconductor devices in the Global GaN Semiconductor Devices market.”
To define the market conditions in the next 3-4 years, TechNavio analysts have conducted in-depth analysis of the impact of market drivers, challenges and trends featuring data on product segmentations, vendor shares, growth rate by revenue and an evaluation of the different buying criteria in the order of importance.
https://www.technavio.com/%3Cp%3EIf%20you%20are%20interested%20in%20more%…
